Part Number | RN1705JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ESV |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN1705JE(TE85L,F)
TOSHBIA
8000
0.86
MY Group (Asia) Limited
RN1705JE
TOSHI
4000
1.4925
HK HEQING ELECTRONICS LIMITED
RN1705JE
TOSIBA
17530
2.125
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1705JE(TE85L,F)
TOSIHBA
60000
2.7575
Pivot Technology Co., Ltd.
RN1705JE(TE85L,F)
TOSHIDA
90000
3.39
Redstar Electronic Limited