Description
Common Emmitter BRT. TBD. EMG3. RN1710JE. . . Upon Request. Common Emmitter BRT. TBD. RN1701JE . . . Upon Request. Common Emmitter BRT.
Part Number | RN1701JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ESV |
Series | - |
Packaging | |
Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN1701JE
TOSHBIA
6078
1.44
Dedicate Electronics (HK) Limited
RN1701JE
TOSHI
1000
2.775
ONSTAR ELECTRONICS CO., LIMITED
RN1701JE(TE85L,F)
TOSIBA
8000
4.11
MY Group (Asia) Limited
RN1701JE
TOSIHBA
11690
5.445
SENTAI CO., LIMITED
RN1701,LF(B
TOSHIDA
3000
6.78
C&G Electronics (HK) Co., Ltd