Part Number | RN1673 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.3W SM6 |
Series | - |
Packaging | |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
RN1673(TE85L,F)
TOSHBIA
6621
1.24
MY Group (Asia) Limited
RN1673
TOSHI
3615
2.065
Dedicate Electronics (HK) Limited
RN1673(TE85L,F)
TOSIBA
3904
2.89
Cicotex Electronics (HK) Limited
RN1673
TOSIHBA
1380
3.715
Yingxinyuan INT'L (Group) Limited
RN1673TE85L,F
TOSHIDA
8359
4.54
Pivot Technology Co., Ltd.