Description
RN1610, TOSHIBA, SOT-163, Discrete Semiconductor Products, Transistors (BJT) - Arrays, Pre-Biased
Part Number | RN1610 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.3W SM6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
RN1610
TOSHBIA
6000
1.39
Gallop Great Holdings (Hong Kong) Limited
RN1610
TOSHI
267330
2.75
Cicotex Electronics (HK) Limited
RN1610
TOSIBA
368000
4.11
Shenzhen WTX Capacitor Co., Ltd.
RN1610 / XK
TOSIHBA
14000
5.47
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1610
TOSHIDA
3000
6.83
DES TECHNOLOGY (HK) LIMITED