Part Number | RN1608 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.3W SM6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
RN1608(TE85L,F)
TOSHBIA
8000
0.83
MY Group (Asia) Limited
RN1608
TOSHI
8517
1.3425
AIC Semiconductor Co., Limited
RN1608
TOSIBA
2415
1.855
HK HEQING ELECTRONICS LIMITED
RN1608
TOSIHBA
3415
2.3675
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1608
TOSHIDA
12000
2.88
Yingxinyuan INT'L (Group) Limited