Part Number | RN1427TE85LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 200MW SMINI |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 300MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |
Image |
RN1427TE85LF
TOSHBIA
8000
1.89
MY Group (Asia) Limited
RN1427TE85LF
TOSHI
6046
3.1575
Dedicate Electronics (HK) Limited
RN1427
TOSIBA
83000
4.425
Yingxinyuan INT'L (Group) Limited
RN1427
TOSIHBA
48000
5.6925
Bonase Electronics (HK) Co., Limited
RN1427(TE85L,F)
TOSHIDA
9000
6.96
Showtech International (HK) Co.,Limited