Part Number | RN1427TE85LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 200MW SMINI |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 300MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |
Image |
RN1427TE85LF
TOSHBIA
8000
1.33
MY Group (Asia) Limited
RN1427TE85LF
TOSHI
6046
2.1975
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TOSIBA
83000
3.065
Yingxinyuan INT'L (Group) Limited
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3.9325
Bonase Electronics (HK) Co., Limited
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4.8
Showtech International (HK) Co.,Limited