Part Number | RN1421TE85L,F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 200MW SMINI |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 2mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 300MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |
Image |
RN1421TE85LF
TOSHBIA
6133
0.3
MY Group (Asia) Limited
RN1421TE85LF
TOSHI
4772
1.48
BD Electronics Ltd
RN1421TE85L,F
TOSIBA
1363
2.66
TERNARY UNION CO., LIMITED
RN1421(TE85L,F)
TOSIHBA
6218
3.84
Longisland Tech Co., Ltd
RN1421TE85L
TOSHIDA
2200
5.02
Pacific Corporation