Part Number | RN1409LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 50V 0.2W SMINI |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |
Image |
RN1409LF
TOSHBIA
2292
0.47
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
RN1409,LF(B
TOSHI
6548
1.5175
MY Group (Asia) Limited
RN1409LF
TOSIBA
5471
2.565
Ande Electronics Co., Limited
RN1409
TOSIHBA
5186
3.6125
Belt (HK) Electronics Co
RN1409
TOSHIDA
1117
4.66
Yingxinyuan INT'L (Group) Limited