Part Number | RN1317(TE85L,F) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W USM |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Image |
RN1317
TOSHBIA
8681
1.76
IC Chip Co., Ltd.
RN1317
TOSHI
4709
2.4625
HK HEQING ELECTRONICS LIMITED
RN1317
TOSIBA
8515
3.165
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1317
TOSIHBA
3482
3.8675
Cicotex Electronics (HK) Limited
RN1317(TE85L,F)
TOSHIDA
3754
4.57
Ysx Tech Co., Limited