Part Number | RN1131MFV |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.15W VESM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 100k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN1131MFV
TOSHBIA
447
1.47
Hong Kong Shun Ye Electronics Co., Limited
RN1131MFV
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8680
2.2525
LanKa Micro Electronic Co.,Limited
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TOSIBA
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3.035
Gallop Great Holdings (Hong Kong) Limited
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2719
3.8175
Seven-Two Tech (HK) Co., Limited
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TOSHIDA
1404
4.6
Shenzhen hsw Technology Co., Ltd