Part Number | RN1116 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W SSM |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Image |
RN1116
TOSHBIA
242984
0.37
Gallop Great Holdings (Hong Kong) Limited
RN1116
TOSHI
42000
1.1675
Bonase Electronics (HK) Co., Limited
RN1116
TOSIBA
267190
1.965
Cicotex Electronics (HK) Limited
RN1116
TOSIHBA
12418
2.7625
N&S Electronic Co., Limited
RN1116(TE85L)
TOSHIDA
14000
3.56
CIS Ltd (CHECK IC SOLUTION LIMITED)