Part Number | RN1112ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1112ACT
TOSHBIA
2054
1.21
Dedicate Electronics (HK) Limited
RN1112ACT
TOSHI
5716
2.5175
ONSTAR ELECTRONICS CO., LIMITED
RN1112ACT(TPL3)
TOSIBA
2707
3.825
MY Group (Asia) Limited
RN1112ACT
TOSIHBA
9457
5.1325
SENTAI CO., LIMITED
RN1112
TOSHIDA
371
6.44
CIS Ltd (CHECK IC SOLUTION LIMITED)