Part Number | RN1112 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W SSM |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Image |
RN1112(T5L,F,T)
TOSHBIA
8000
1.24
MY Group (Asia) Limited
RN1112
TOSHI
90000
2.4325
AIC Semiconductor Co., Limited
RN1112
TOSIBA
3000
3.625
HK HEQING ELECTRONICS LIMITED
RN1112
TOSIHBA
267179
4.8175
Cicotex Electronics (HK) Limited
RN1112
TOSHIDA
3
6.01
CIS Ltd (CHECK IC SOLUTION LIMITED)