Part Number | RN1111ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1111ACT
TOSHBIA
5953
1.28
Dedicate Electronics (HK) Limited
RN1111ACT
TOSHI
1000
2.215
ONSTAR ELECTRONICS CO., LIMITED
RN1111ACT(TPL3)
TOSIBA
15000
3.15
MY Group (Asia) Limited
RN1111ACT
TOSIHBA
10859
4.085
SENTAI CO., LIMITED
RN1111
TOSHIDA
5953
5.02
Dedicate Electronics (HK) Limited