Part Number | RN1110MFV,L3F(T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.15W VESM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN1110MFV,L3F
TOSHBIA
8000
1.41
MY Group (Asia) Limited
RN1110MFV,L3F(T
TOSHI
40000
1.905
ASIAWAY (H.K.) LIMITED
RN1110MFV,L3F(T
TOSIBA
2000000
2.4
HYTON TECHNOLOGY LIMITED
RN1110
TOSIHBA
3306
2.895
Yingxinyuan INT'L (Group) Limited
RN1110(T5LFT)
TOSHIDA
3669
3.39
Zhengxinyuan Electronics (HK) Co., Limited