Part Number | RN1110CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.05W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1110CT
TOSHBIA
5000
1.44
Gallop Great Holdings (Hong Kong) Limited
RN1110CT(TPL3)
TOSHI
8000
2.48
MY Group (Asia) Limited
RN1110CT
TOSIBA
5951
3.52
Dedicate Electronics (HK) Limited
RN1110CT
TOSIHBA
40000
4.56
AIC Semiconductor Co., Limited
RN1110CT
TOSHIDA
267168
5.6
Cicotex Electronics (HK) Limited