Part Number | RN1110ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1110ACT
TOSHBIA
5951
1.1
Dedicate Electronics (HK) Limited
RN1110ACT(TPL3)
TOSHI
8000
1.5375
MY Group (Asia) Limited
RN1110MFV,L3F(B
TOSIBA
7999
1.975
C&G Electronics (HK) Co., Ltd
RN1110MFV(TPL3)
TOSIHBA
7755
2.4125
Pacific Corporation
RN1110(T5L,F,T)
TOSHIDA
8000
2.85
MY Group (Asia) Limited