Part Number | RN1109CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.05W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1109CT(TPL3)
TOSHBIA
8000
1.75
MY Group (Asia) Limited
RN1109CT
TOSHI
5948
2.8925
Dedicate Electronics (HK) Limited
RN1109CT
TOSIBA
40000
4.035
AIC Semiconductor Co., Limited
RN1109CT
TOSIHBA
267164
5.1775
Cicotex Electronics (HK) Limited
RN1109CT
TOSHIDA
5000
6.32
Gallop Great Holdings (Hong Kong) Limited