Part Number | RN1109ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1109ACT
TOSHBIA
5948
0.69
Dedicate Electronics (HK) Limited
RN1109ACT
TOSHI
1000
1.565
ONSTAR ELECTRONICS CO., LIMITED
RN1109ACT(TPL3)
TOSIBA
8000
2.44
MY Group (Asia) Limited
RN1109ACT
TOSIHBA
10855
3.315
SENTAI CO., LIMITED
RN1109MFVTPL3
TOSHIDA
11500
4.19
Pacific Corporation