Part Number | RN1107ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1107ACT
TOSHBIA
5000
1.11
Gallop Great Holdings (Hong Kong) Limited
RN1107ACT(TPL3)
TOSHI
8000
2.075
MY Group (Asia) Limited
RN1107ACT
TOSIBA
80000
3.04
AIC Semiconductor Co., Limited
RN1107ACT
TOSIHBA
20000
4.005
HK HEQING ELECTRONICS LIMITED
RN1107ACT
TOSHIDA
21000
4.97
CIS Ltd (CHECK IC SOLUTION LIMITED)