Part Number | RN1106MFV |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.15W VESM |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN1106MFV
TOSHBIA
160000
0.01
Gallop Great Holdings (Hong Kong) Limited
RN1106MFV
TOSHI
14077
1.165
MAXTRONIC GLOBAL LIMITED
RN1106MFV(TPL3)
TOSIBA
90000
2.32
Redstar Electronic Limited
RN1106MFV
TOSIHBA
34270
3.475
NEW IDEAS INDUSTRIAL CO., LIMITED
RN1106MFV(TL3,T)
TOSHIDA
162780
4.63
CIS Ltd (CHECK IC SOLUTION LIMITED)