Part Number | RN1106ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1106ACT
TOSHBIA
5000
1.51
Gallop Great Holdings (Hong Kong) Limited
RN1106ACT
TOSHI
100
2.8925
YUFO ELECTRONICS LIMITED
RN1106ACT(TPL3)
TOSIBA
8000
4.275
MY Group (Asia) Limited
RN1106ACT
TOSIHBA
5938
5.6575
Dedicate Electronics (HK) Limited
RN1106
TOSHIDA
15000
7.04
Hong Kong Capital Industrial Co.,Ltd