Part Number | RN1105MFV,L3F(CB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.15W VESM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN1105MFV,L3F(CB
TOSHBIA
15890
1.26
Well Sources Technology Co.Ltd
RN1105MFV,L3F(CB
TOSHI
15890
2.3825
LINK ELECTRONICS LIMITED
RN1105MFV,L3F(CB
TOSIBA
14987
3.505
Beijing jingbei Components Co.,Ltd
RN1105MFV,L3F(CT
TOSIHBA
75000
4.6275
Redstar Electronic Limited
RN1105MFV,L3F
TOSHIDA
8000
5.75
MY Group (Asia) Limited