Description
RN1105CT, TOSHIBA, CST3, Discrete Semiconductor Products, Transistors (BJT) - Single, Pre-Biased
Part Number | RN1105CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.05W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1105CT
TOSHBIA
5000
1.5
Gallop Great Holdings (Hong Kong) Limited
RN1105CT(TPL3)
TOSHI
8000
2.54
MY Group (Asia) Limited
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TOSIBA
5934
3.58
Dedicate Electronics (HK) Limited
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TOSIHBA
40000
4.62
AIC Semiconductor Co., Limited
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4000
5.66
Pacific Corporation