Part Number | RN1105ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1105ACT
TOSHBIA
5934
1.14
Dedicate Electronics (HK) Limited
RN1105ACT
TOSHI
1000
2.08
ONSTAR ELECTRONICS CO., LIMITED
RN1105ACT(TPL3)
TOSIBA
8000
3.02
MY Group (Asia) Limited
RN1105ACT
TOSIHBA
10847
3.96
SENTAI CO., LIMITED
RN1105
TOSHIDA
15000
4.9
Hongkong Rixin International Trading Company