Part Number | RN1104MFV,L3F(CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.15W VESM |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN1104MFV,L3F
TOSHBIA
4699
0.36
C&G Electronics (HK) Co., Ltd
RN1104MFV,L3F
TOSHI
3350
1.745
MY Group (Asia) Limited
RN1104MFV,L3F(CT
TOSIBA
2998
3.13
Kinda Components Limited
RN1104MFV,L3F
TOSIHBA
9204
4.515
Shenzhen Xinweitaiweiye Electronic Firm
RN1104MFV(TL3,T
TOSHIDA
9175
5.9
C&G Electronics (HK) Co., Ltd