Part Number | RN1102T5LFT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W SSM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Image |
RN1102T5LFT
TOSHBIA
8000
0.1
MY Group (Asia) Limited
RN1102T5LFT
TOSHI
8129
1.0025
RX ELECTRONICS LIMITED
RN1102
TOSIBA
114000
1.905
JFJ Electronics Co.,Limited
RN1102
TOSIHBA
7500
2.8075
Yingxinyuan INT'L (Group) Limited
RN1102TE85LF
TOSHIDA
27985
3.71
Pacific Corporation