Part Number | RN1101MFV,L3F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 50V SOT723 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN1101MFV,L3F
TOSHBIA
6706
0.04
Acon Electronics Limited
RN1101MFV,L3F
TOSHI
5000
0.7525
Gallop Great Holdings (Hong Kong) Limited
RN1101MFV,L3F
TOSIBA
7706
1.465
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1101MFV,L3F
TOSIHBA
25000
2.1775
Yingxinyuan INT'L (Group) Limited
RN1101MFV,L3F
TOSHIDA
6706
2.89
KDH SEMICONDUCTOR CO., LIMITED