Part Number | RN1101CT(TPL3) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.05W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1101CT(TPL3)
TOSHBIA
8000
1.03
MY Group (Asia) Limited
RN1101CT(TPL3)
TOSHI
60000
2.3175
HK HEQING ELECTRONICS LIMITED
RN1101CT(TPL3)
TOSIBA
60000
3.605
AIC Semiconductor Co., Limited
RN1101CT(TPL3)
TOSIHBA
60000
4.8925
Gallop Great Holdings (Hong Kong) Limited
RN1101CT
TOSHIDA
5918
6.18
Dedicate Electronics (HK) Limited