Part Number | RN1101ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 0.1W CST3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN1101ACT
TOSHBIA
21000
0.33
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1101ACT
TOSHI
5000
1.32
Gallop Great Holdings (Hong Kong) Limited
RN1101ACT
TOSIBA
80000
2.31
AIC Semiconductor Co., Limited
RN1101ACT
TOSIHBA
5917
3.3
Dedicate Electronics (HK) Limited
RN1101ACT(TPL3)
TOSHIDA
8000
4.29
MY Group (Asia) Limited