Description
Apr 18, 2003 [Type number: RA13H1317M (Po>13W @135-175MHz, Vdd=12.5V)]. Test Conditions are;. C=100pF, R=1.5K , 3 times discharge for one Apr 18, 2003 [Type number: RA13H1317M (Po>13W @135-175MHz, Vdd=12.5V)]. Test Conditions are;. C=100pF, R=1.5K , 3 times discharge for one RA13H1317M . RA08H1317M. RA13H8891MA/8891MB. RA03M8894M. RA55H3340M/3847M/4047M/4452M. RA08N1317M. RA07N3340M/4047M/ 4452M. RA13H1317M . RA08H1317M. RA13H8891MA/8891MB. RA03M8894M. RA55H3340M/3847M/4047M/4452M. RA08N1317M. RA07N3340M/4047M/ 4452M. RA13H1317M . RA06H8285M. RA20H8087M. RA20H8994M. RA07H0608M. RA07H3340M/4047M/4452M. RA13H3340M/4047M/4452M. RA45H4047M/
Part Number | RA13H1317M |
Brand | Toshiba |
Image |
RA13H1317M
TOSHBIA
120
0.68
Bonase Electronics (HK) Co., Limited
RA13H1317M
TOSHI
5879
1.9325
Dedicate Electronics (HK) Limited
RA13H1317M
TOSIBA
590
3.185
WIN AND WIN ELECTRONICS LIMITED
RA13H1317M
TOSIHBA
1010
4.4375
N&S Electronic Co., Limited
RA13H1317M
TOSHIDA
1350
5.69
Nosin (HK) Electronics Co.