Part Number | R6020ANX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 20A TO-220FM |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image |
R6020ANX
TOSHBIA
1000
1.64
ONSTAR ELECTRONICS CO., LIMITED
R6020ANX
TOSHI
1350
2.8575
Nosin (HK) Electronics Co.
R6020ANX
TOSIBA
14000
4.075
MY Group (Asia) Limited
R6020ANX
TOSIHBA
18000
5.2925
MASSTOCK ELECTRONICS LIMITED
R6020ANX
TOSHIDA
70000
6.51
ALPINE ELECTRONICS LTD