Part Number | R6012FNX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 12A TO-220FM |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 510 mOhm @ 6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image |
R6012FNX
TOSHBIA
30000
1.06
SUNTOP SEMICONDUCTOR CO., LIMITED
R6012FNX
TOSHI
1000
2.1675
ONSTAR ELECTRONICS CO., LIMITED
R6012FNX
TOSIBA
200000
3.275
Shenzhen WTX Capacitor Co., Ltd.
R6012FNX
TOSIHBA
14000
4.3825
MY Group (Asia) Limited
R6012FNX
TOSHIDA
70000
5.49
ALPINE ELECTRONICS LTD