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Part Number | R6008FNX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 8A TO-220FM |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image | ![]() |
R6008FNX
TOSHBIA
14000
1.08
MY Group (Asia) Limited
R6008FNX
TOSHI
200000
1.8875
Shenzhen WTX Capacitor Co., Ltd.
R6008FNX
TOSIBA
4260
2.695
ONSTAR ELECTRONICS CO., LIMITED
R6008FNX
TOSIHBA
65262
3.5025
Cicotex Electronics (HK) Limited
R6008FNJ TLL
TOSHIDA
849
4.31
Yingxinyuan INT'L (Group) Limited