Part Number | R6006ANX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 6A TO-220FM |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image |
R6006ANX
TOSHBIA
9999
0.38
ShenZhen XinChi TianCheng Technology Co,.Ltd
R6006ANX
TOSHI
500
1.0425
Gallop Great Holdings (Hong Kong) Limited
R6006ANX
TOSIBA
220360
1.705
Cinty Int'l (HK) Industry Co., Limited
R6006ANX
TOSIHBA
475
2.3675
RX ELECTRONICS LIMITED
R6006ANX TK6A60
TOSHIDA
43363
3.03
N&S Electronic Co., Limited