Part Number | R5011ANX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 500V 11A TO220 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 5.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
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R5011ANX
TOSHBIA
14000
1.78
MY Group (Asia) Limited
R5011ANX
TOSHI
5000
3.0975
HITO TECHNOLOGY LIMITED
R5011ANX
TOSIBA
200000
4.415
Shenzhen WTX Capacitor Co., Ltd.
R5011ANX
TOSIHBA
4260
5.7325
ONSTAR ELECTRONICS CO., LIMITED
R5011ANX
TOSHIDA
53034
7.05
Cicotex Electronics (HK) Limited