Part Number | NTD18N06LT4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 60V 18A DPAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 675pF @ 25V |
Vgs (Max) | ±15V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 9A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
NTD18N06LT4G
TOSHBIA
9413
1.45
HK HEQING ELECTRONICS LIMITED
NTD18N06LT4G
TOSHI
2666
2.41
Belt (HK) Electronics Co
NTD18N06LT4G
TOSIBA
4279
3.37
TERNARY UNION CO., LIMITED
NTD18N06LT4G
TOSIHBA
7682
4.33
Really Technology Co., Limited
NTD18N06LT4G
TOSHIDA
6781
5.29
Xiefeng (HK) INT'L Electronics Limited