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Description
Datasheet D (2). S (3). See detailed ordering, marking and shipping information on page 6 of this data sheet. ORDERING AND MARKING INFORMATION. NDF10N60ZG . Nov 12, 2014 NDF05N50ZG. NDF08N50ZG. NDF11N50ZG. NDF02N60ZG. NDF08N60ZG. NDF10N60ZG . NDF06N60ZG. NDF03N60ZG. NDF04N60ZG Jun 16, 2009 power management solutions. Phase 1 Introduce 600 V Product Family. 2Q09. NDF10N60ZG , NDF06N60ZG, NDF04N60ZG in TO-220FP. Sep 25, 2014 NDF10N60ZG . Test. Conditions. Interval. Result. H3TRB. Ta=85 C, 85% RH, 80 % rated Bvdss or 100V. 504 hr. 0/231. HTRB. Ta=150 C 80%
| Part Number | NDF10N60ZG |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Toshiba |
| Description | MOSFET N-CH 600V 10A TO-220FP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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