Part Number | MT3S20TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Toshiba |
Description | TRANS RF NPN 7GHZ 80MA UFM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 20mA, 5V |
Gain | 12dB |
Power - Max | 900mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | UFM |
Image |
MT3S20TU(TE85L)
TOSHBIA
7648
0.13
Worldway Electronics Limited
MT3S20TU
TOSHI
7034
1.2875
CIS Ltd (CHECK IC SOLUTION LIMITED)
MT3S20TU
TOSIBA
3859
2.445
Gallop Great Holdings (Hong Kong) Limited
MT3S20TU
TOSIHBA
585
3.6025
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
MT3S20TU(TE85L)
TOSHIDA
3628
4.76
MY Group (Asia) Limited