Part Number | MT3S20TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Toshiba |
Description | TRANS RF NPN 7GHZ 80MA UFM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 20mA, 5V |
Gain | 12dB |
Power - Max | 900mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | UFM |
Image |
MT3S20TU(TE85L)
TOSHBIA
12680
1.84
Worldway Electronics Limited
MT3S20TU
TOSHI
1420
2.795
CIS Ltd (CHECK IC SOLUTION LIMITED)
MT3S20TU
TOSIBA
5000
3.75
Gallop Great Holdings (Hong Kong) Limited
MT3S20TU
TOSIHBA
360000
4.705
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
MT3S20TU(TE85L)
TOSHIDA
8000
5.66
MY Group (Asia) Limited