Part Number | MT3S20P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Toshiba |
Description | TRANS RF NPN 12V 1GHZ PW-MINI |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
Gain | 16.5dB |
Power - Max | 1.8W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | PW-MINI |
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MT3S20P(TE12L
TOSHBIA
126298
0.25
Cicotex Electronics (HK) Limited
MT3S20P
TOSHI
99899
1.4475
Shinever Technology Limited
MT3S20P
TOSIBA
1984
2.645
Xinnlinx Electronics Pte
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TOSIHBA
5000000
3.8425
Hongkong Shengshi Electronics Limited
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TOSHIDA
8000
5.04
Ysx Tech Co., Limited