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Description
DATASHEET MJE2955T (PNP),. MJE3055T (NPN). Complementary Silicon. Plastic Power Transistors. These devices are designed for use in general purpose amplifier and. MJE2955T . General Purpose and Switching Applications. DC Current Gain Specified to IC = 10 A. High Current Gain Bandwidth Product : fT = 2MHz (Min.) 1. E. HIGH VOLTAGE TRANSISTOR. . DESCRIPTION. The UTC MJE2955T is designed for general purpose of amplifier and switching applications. TO-252. 1. ELECTRICALLY SIMILAR TO MJE2955T . AND MJE3055T. APPLICATIONS s. GENERAL PURPOSE SWITCHING AND. AMPLIFIER. DESCRIPTION. The.
| Part Number | MJE2955T |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Toshiba |
| Description | TRANS PNP 60V 10A TO-220 |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Power - Max | 75W |
| Frequency - Transition | 2MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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