Part Number | MII75-12A3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Toshiba |
Description | MOD IGBT RBSOA 1200V 90A Y4-M5 |
Series | - |
IGBT Type | NPT |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 90A |
Power - Max | 370W |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
Current - Collector Cutoff (Max) | 4mA |
Input Capacitance (Cies) @ Vce | 3.3nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Y4-M5 |
Supplier Device Package | Y4-M5 |
Image |
MII75-12A3
TOSHBIA
2605
1.52
Sinway International Co., Limited
MII75-12A3
TOSHI
6692
2.29
CIS Ltd (CHECK IC SOLUTION LIMITED)
MII75-12A3
TOSIBA
1790
3.06
Redstar Electronic Limited
MII75-12A3
TOSIHBA
6175
3.83
HongKong JDG Electronic Co., Limited
MII75-12A3 ROHS
TOSHIDA
8515
4.6
Ramos S.R.L.