Part Number | MII200-12A4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Toshiba |
Description | MOD IGBT RBSOA 1200V 270A Y3-DCB |
Series | - |
IGBT Type | NPT |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 270A |
Power - Max | 1130W |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 150A |
Current - Collector Cutoff (Max) | 10mA |
Input Capacitance (Cies) @ Vce | 11nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Y3-DCB |
Supplier Device Package | Y3-DCB |
Image |
MII200-12A4
TOSHBIA
10000
0.89
East Pioneer Electronic Co., Limited
MII200-12A4
TOSHI
2898
1.795
NOSIN (HK) ELECTRONICS CO., LIMITED
MII200-12A4
TOSIBA
1000
2.7
Hong Kong Lakes Electronics Co., Limited
MII200-12A4
TOSIHBA
2909
3.605
Belt (HK) Electronics Co
MII200-12A4
TOSHIDA
6178
4.51
Dedicate Electronics (HK) Limited