Description
Symbol. Parameter. Value. Unit. VCBO. Collector-Base Voltage (IE = 0). -60. V. VCEO. Collector-Emitter Voltage (IB = 0). -40. V. VEBO. Emitter-Base Voltage (IC DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Ranging from 0.5A up to 6A output current, the available devices allow gate driving of IGBTs and MOS transistors with different power classes. The DSO-8. (1) The resistors have a 12-digit ordering code starting with 2322 / 2350. (2) The subsequent 4 or 5 digits indicate the resistor tolerance and packaging.
Part Number | K10A50D |
Brand | Toshiba |
Image |
K10A50D
TOSHBIA
5786
1.43
Dedicate Electronics (HK) Limited
K10A50D
TOSHI
43
2.6725
ShenZhen HengBin Technology Co.,Limited
K10A50D
TOSIBA
20000
3.915
Redstar Electronic Limited
K10A50D
TOSIHBA
5000
5.1575
Ande Electronics Co., Limited
K10A50D
TOSHIDA
5600
6.4
Cicotex Electronics (HK) Limited