Part Number | JANS2N2920 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS 2NPN 60V 0.03A TO-18 |
Series | Military, MIL-PRF-19500/355 |
Packaging | Bulk |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 30mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Power - Max | 350mW |
Frequency - Transition | - |
Operating Temperature | 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |
Image |
JANS2N2920
TOSHBIA
7342
0.41
MY Group (Asia) Limited
JANS2N2920
TOSHI
4392
0.855
American Microsemiconductor Inc.
JANS2N3700UB
TOSIBA
2656
1.3
JFJ Electronics Co.,Limited
JANS2N2221AUBC
TOSIHBA
1875
1.745
MY Group (Asia) Limited
JANS2N2218
TOSHIDA
6718
2.19
American Microsemiconductor Inc.