Part Number | IXTB30N100L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 1000V 30A PLUS264 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 545nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 800W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS264 |
Package / Case | TO-264-3, TO-264AA |
Image |
IXTB30N100L
TOSHBIA
1000
0.5
MY Group (Asia) Limited
IXTB30N100L
TOSHI
13800
1.0675
AAC Technology Co., Limited
IXTB30N100L
TOSIBA
9800
1.635
Bonase Electronics (HK) Co., Limited
IXTB30N100L
TOSIHBA
1000
2.2025
MY Group (Asia) Limited
IXTB30N100L
TOSHIDA
6000
2.77
Kinda Components Limited