Part Number | IRFR430ATRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 500V 5A DPAK |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRFR430ATRPBF
TOSHBIA
9547
0.65
SUNTOP SEMICONDUCTOR CO., LIMITED
IRFR430ATRPBF
TOSHI
1025
1.27
Yingxinyuan INT'L (Group) Limited
IRFR430ATRPBF
TOSIBA
3011
1.89
Pacific Corporation
IRFR430ATRPBF
TOSIHBA
346
2.51
QUARKTWIN TECHNOLOGY LIMITED
IRFR430ATRPBF
TOSHIDA
2796
3.13
N&S Electronic Co., Limited