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Description
Document Number: 91161 www.vishay.com. S09-0011-Rev. A, 19-Jan-09. 1. Power MOSFET. IRFI840G , SiHFI840G. Vishay Siliconix. FEATURES. Isolated Document Number: 91160 www.vishay.com. S-81292-Rev. A, 16-Jun-08. 1. Power MOSFET. IRFI840GLC, SiHFI840GLC. Vishay Siliconix. FEATURES. Notes: This part marking information applies to all devices produced before 02/26 /2001. EXAMPLE: LOT CODE E401. THIS IS AN IRFI840G . WITH ASSEMBLY. Jul 26, 2004 EXAMPLE: THIS IS AN IRFI840G . LOT CODE 3432. ASSEMBLED ON WW 24 1999. IN THE ASSEMBLY LINE K. PART NUMBER. LOT CODE. Aug 23, 2004 EXAMPLE: THIS IS AN IRFI840G . LOT CODE 3432. ASSEMBLED ON WW 24 1999. IN THE ASSEMBLY LINE K. PART NUMBER. LOT CODE.
| Part Number | IRFI840G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Toshiba |
| Description | MOSFET N-CH 500V 4.6A TO220FP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 2.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Image |  |
IRFI840G
TOSHBIA
950
1.02
HK HEQING ELECTRONICS LIMITED
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TOSHI
200000
2.03
Shenzhen WTX Capacitor Co., Ltd.
IRFI840G
TOSIBA
38958
3.04
CIS Ltd (CHECK IC SOLUTION LIMITED)
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TOSIHBA
239860
4.05
Cicotex Electronics (HK) Limited
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TOSHIDA
35629
5.06
Ande Electronics Co., Limited
