(4/5) based on 14 customer reviews
Description
MOSFET 2N-CH 30V 9.1A/11A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 9.1A, 11A Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25米A Gate Charge (Qg) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) @ Vds: 850pF @ 15V Power - Max: 2W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | IRF7907TRPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Toshiba |
| Description | MOSFET 2N-CH 30V 9.1A/11A 8-SOIC |
| Series | HEXFET |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 11A |
| Rds On (Max) @ Id, Vgs | 16.4 mOhm @ 9.1A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
Hot Offer
IRF7907TRPBF
TOSIBA
500000
4.635
VBsemi Electronics Co., Limited
IRF7907TRPBF
TOSIHBA
50004
6.0525
Shenzhen High Quality Electronic Semiconductor Co., Ltd
IRF7907TRPBF
TOSHIDA
46000
7.47
MAN CHEONG (HK) ELECTRONICS LIMITED
IRF7907TRPBF
TOSHBIA
1000
1.8
United Sources Industrial Enterprises Limited
IRF7907TRPBF
TOSHI
180
3.2175
SUNTOP SEMICONDUCTOR CO., LIMITED
