Part Number | IPW60R190E6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 20.2A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 630µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW60R190E6
TOSHBIA
706
0.47
HK HEQING ELECTRONICS LIMITED
IPW60R190E6
TOSHI
8676
1.535
LINK ELECTRONICS LIMITED
IPW60R190E6
TOSIBA
6978
2.6
HK KK Int'l Co.,Limited
IPW60R190E6
TOSIHBA
6699
3.665
ANCHIP TECHNOLOGY CO., LIMITED
IPW60R190E6
TOSHIDA
8182
4.73
KWANGHUA TECHNOLOGY LIMITED